EVALUATION, VERIFICATION AND ERROR DETERMINATION OF PROXIMITY PARAMETERS ALPHA,BETA AND ETA IN ELECTRON-BEAM LITHOGRAPHY

被引：12

作者：

DUBONOS, SV

GAIFULLIN, BN

RAITH, HF

SVINTSOV, AA

ZAITSEV, SI

机构：

[1] Institute of Microelectronics Technology, Academy of Sciences, Chernogolovka

[2] Raith GmbH, D-4600 Dortmund 50

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 21卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(93)90076-H

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new procedure for proximity parameter determination in electron beam lithography is presented and discussed. The results obtained with this method are not influenced by errors induced by the development process and can be proved to be accurate within a 20% range.

引用

页码：293 / 296

页数：4