Laser-assisted microstructuring and characterization of polybithiophene

The microstructuring of polybithiophene by semiconductor photocatalysis was examined on n-type Si as a function of the deposition parameters potential, laser-power and scan-velocity. Structures (lines or dots) with lateral extension ranging from 10 to 200 mu m and length up to 2 mm were obtained. Their thickness was about 1 mu m. Another successful way for the structuring was to deposit the polymer by laser beam in honeycomb structures, which were completely filled by the polymer. Every honeycomb could be addressed separately. The properties of the locally deposited polybithiophene were analyzed by microscopy, cyclic voltammetry and scanning electrochemical microscopy (SECM) experiments. The microstructures can be oxidized or reduced reversibly, similar to the bulk material, and are insulating in the reduced form (red color) and conducting in the oxidized form (blue color). The redox cycle can be repeated more than 10(3) times. The optical as well as the electronic properties were found to be similar to the macroscopically formed homogeneous films.