PREPARATION AND PROPERTIES OF EPITAXIAL GALLIUM PHOSPHIDE

[1] ALFREY GF, 1960, Z NATURFORSCH, VA 15, P267

[2] ALLEN JW, 1962, J PHYS CHEM SOLIDS, V23, P163

[3] DYAKONOV LI, 1966, SOVIET PHYSDOKLADY, V10, P650

[4] PREPARATION OF INAS, INP, GAAS, AND GAP BY CHEMICAL METHODS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (03) : 252 - 253

[5] SCREENING EFFECTS IN POLAR SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 130 - 135

[6] PREPARATION OF GAASXP1-X BY VAPOR PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 814 - 817

[7] FROSCH CJ, 1961, J ELECTROCHEM SOC, V108, pC177

[8] RADIATIVE RECOMBINATION BETWEEN DEEP-DONOR-ACCEPTOR PAIRS IN GAP [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1528 - &

[9] The chlorides of gallium [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1940, 62 : 1578 - 1583

[10] LORENZ MR, 1966, JAN B AM PHYS SOC M

[1] ALFREY GF, 1960, Z NATURFORSCH, VA 15, P267

[2] ALLEN JW, 1962, J PHYS CHEM SOLIDS, V23, P163

[3] DYAKONOV LI, 1966, SOVIET PHYSDOKLADY, V10, P650

[4] PREPARATION OF INAS, INP, GAAS, AND GAP BY CHEMICAL METHODS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (03) : 252 - 253

[5] SCREENING EFFECTS IN POLAR SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 130 - 135

[6] PREPARATION OF GAASXP1-X BY VAPOR PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 814 - 817

[7] FROSCH CJ, 1961, J ELECTROCHEM SOC, V108, pC177

[8] RADIATIVE RECOMBINATION BETWEEN DEEP-DONOR-ACCEPTOR PAIRS IN GAP [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) : 1528 - &

[9] The chlorides of gallium [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1940, 62 : 1578 - 1583

[10] LORENZ MR, 1966, JAN B AM PHYS SOC M