DEDUCTION OF IMPURITY WAVE-FUNCTIONS FROM PHOTOIONIZATION PROPERTIES

被引：10

作者：

RYNNE, EF ^{[1
]}

COX, JR ^{[1
]}

MCGUIRE, JB ^{[1
]}

BLAKEMORE, JS ^{[1
]}

机构：

[1] FLORIDA ATLANTIC UNIV,DEPT PHYS,BOCA RATON,FL 33432

来源：

PHYSICAL REVIEW LETTERS | 1976年 / 36卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.36.155

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：155 / 158

页数：4

共 20 条

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[3]

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[7] PHOTOIONIZATION OF DEEP IMPURITY LEVELS IN SEMICONDUCTORS WITH NON-PARABOLIC BANDS [J].

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[8]

GRIMMEISS HG, 1974, METAL SEMICONDUCTOR, P187

[9]

LAX M, 1956, 1954 PHOT C ATL CIT, P111

[10] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J].

Lucovsky, G. .

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