FAR INFRARED PHOTOCONDUCTIVITY OF RESIDUAL ACCEPTORS IN PURE TELLURIUM

被引：3

作者：

KLITZING, KV ^{[1
]}

BECKER, CR ^{[1
]}

机构：

[1] UNIV WURZBURG,INST PHYS,D-8700 WURZBURG,FED REP GER

来源：

SOLID STATE COMMUNICATIONS | 1976年 / 20卷 / 02期

关键词：

D O I：

10.1016/0038-1098(76)90473-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：147 / 150

页数：4

共 12 条

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[8]

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[9] FAR INFRARED PHOTOCONDUCTIVITY FROM MAJORITY AND MINORITY IMPURITIES IN HIGH-PURITY SI AND GE [J].

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[10] MAGNETOSPECTROSCOPY OF SHALLOW DONORS IN GAAS [J].

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