STRENGTH OF INFRARED-ABSORPTION FROM SILICON DONORS AND SILICON ACCEPTORS IN GALLIUM-ARSENIDE

被引：22

作者：

LAITHWAITE, K ^{[1
]}

NEWMAN, RC ^{[1
]}

机构：

[1] UNIV READING,JJ THOMSON PHYS LAB,READING,BERKSHIRE,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1976年 / 9卷 / 24期

关键词：

D O I：

10.1088/0022-3719/9/24/019

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：4503 / 4510

页数：8

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