FERROELECTRIC SWITCHING, MEMORY RETENTION AND ENDURANCE PROPERTIES OF VERY THIN PZT FILMS

Successful ferroelectric polarization and domain switching have been demonstrated in thin leadzirconatetitanate (PZT) films, less than 500Å, prepared by the sol-gel technique.1- In this paper, the ferroelectric switching, memory retention and endurance properties of these thin films, ranging in thickness from 425Å to 1500Å with a Zr/Ti ratio of 50/50, were investigated. A remanent polarization of 27 μC/cm2 was observed on a 650Å thick capacitor with a saturation voltage of 3 volts. A switching speed of 10.8 ns was measured for a 600Å thick, 25 x 25 |lm capacitor. A 1000Å thick, 100 x 100 μm capacitor showed no data loss after 1650 hours of memory retention. The projected life for both 1000° and 650° thick, 40 x 40 p.m capacitors is estimated to be longer than 1 x 1010 switching endurance cycles. Detailed measurements and experimental results will be described. © 1991, Taylor & Francis Group, LLC. All rights reserved.