MODELING AND SIMULATION OF A CHEMICALLY AMPLIFIED DUV RESIST USING THE EFFECTIVE ACID CONCEPT

被引：18

作者：

WEISS, M

BINDER, H

SCHWALM, R

机构：

[1] Fraunhofer-Institute for Silicon Technology (ISiT), D-14199 Berlin

[2] BASF-AG, D-67063 Ludwigshafen

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)00134-G

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on a new method to model chemically amplified resists, using the effective acid concept. The model needs as an input only data of a development rate monitor (DRM), thereby circumventing the problems arising in establishing a detailed kinetic model and determining the kinetic parameters from spectroscopic measurements. The method is applied to the ST3-BASF resist, and considers also secondary effects like surface inhibition and acid depletion near the substrate.

引用

页码：405 / 408

页数：4