A NEW SOLVENT FOR THE GROWTH OF ALPHA-HGI2

被引：7

作者：

BOHAC, P

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 61卷 / 01期

关键词：

D O I：

10.1016/0022-0248(83)90291-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：163 / 166

页数：4

共 12 条

[1] WHAT CAN BE EXPECTED FROM HIGH-Z SEMICONDUCTOR-DETECTORS [J].

ARMANTROUT, GA ;

SWIERKOWSKI, SP ;

SHEROHMAN, JW ;

YEE, JH .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (01) :121-125

[2] IMPROVED CRYSTALS OF MERCURIC IODIDE GROWN IN A HORIZONTAL FURNACE FROM VAPOR-PHASE USING TEMPERATURE OSCILLATION METHOD [J].

BEINGLASS, I ;

DISHON, G ;

HOLZER, A ;

SCHIEBER, M .

JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) :166-170

[3]

BOHAC P, 1981, Patent No. 43333

[4] SOLUTION GROWTH OF MERCURIC IODIDE-CRYSTALS FROM DIMETHYLSULFOXIDE-BASED SOLVENT SYSTEMS [J].

CARLSTON, RC ;

SCHIEBER, MM ;

SCHNEPPLE, WF .

MATERIALS RESEARCH BULLETIN, 1976, 11 (08) :959-966

[5] PRELIMINARY STUDIES ON MERCURIC IODIDE SOFT-GAMMA-RAY DETECTOR [J].

CHUNG, MK ;

CHO, SW .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (01) :112-116

[6]

Kleber W., 1968, KRIST TECH, V3, P65

[7] DEVIATION FROM STOICHIOMETRY IN ALPHA-HGI2 [J].

NICOLAU, IF ;

ROLLAND, G .

MATERIALS RESEARCH BULLETIN, 1981, 16 (06) :759-770

[8] SOLUTION GROWTH OF SPARINGLY SOLUBLE SINGLE-CRYSTALS FROM SOLUBLE COMPLEXES .3. GROWTH OF ALPHA-HGI2 SINGLE-CRYSTALS FROM DIMETHYLSULFOXIDE COMPLEXES [J].

NICOLAU, IF ;

JOLY, JP .

JOURNAL OF CRYSTAL GROWTH, 1980, 48 (01) :61-73

[9] PROPERTIES OF VAPOR-PHASE GROWN MERCURIC IODIDE SINGLE-CRYSTAL DETECTORS [J].

PONPON, JP ;

STUCK, R ;

SIFFERT, P ;

MEYER, B ;

SCHWAB, C .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, NS22 (01) :182-191

[10] VAPOR GROWTH OF HGI-2 BY PERIODIC SOURCE OR CRYSTAL TEMPERATURE OSCILLATION [J].

SCHIEBER, M ;

SCHNEPPLE, WF ;

VANDENBERG, L .

JOURNAL OF CRYSTAL GROWTH, 1976, 33 (01) :125-135

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