VOLUME HOLOGRAM RECORDING AND CHARGE-TRANSFER PROCESS IN BI12SIO20 AND BI12GEO20

被引:200
作者
PELTIER, M [1 ]
MICHERON, F [1 ]
机构
[1] THOMSON CSF,CENT RES LAB,F-91401 ORSAY,FRANCE
关键词
D O I
10.1063/1.324274
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3683 / 3690
页数:8
相关论文
共 19 条
[1]   ELECTRICAL AND OPTICAL PROPERTIES OF BI12SIO20 [J].
ALDRICH, RE ;
HOU, SL ;
HARVILL, ML .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) :493-&
[2]  
ALPHONSE GA, 1975, RCA REV, V36, P213
[3]  
Amodei J. J., 1971, RCA Review, V32, P185
[4]  
CHANUSSOT G, 1975, INT C LOW LYING LATT
[5]  
GLASS AH, 1975, PHOTONICS
[6]   TRANSPORT PROCESSES OF PHOTOINDUCED CARRIERS IN BI12SIO20 [J].
HOU, SL ;
LAUER, RB ;
ALDRICH, RE .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2652-2658
[7]   HIGH-SENSITIVITY READ-WRITE VOLUME HOLOGRAPHIC STORAGE IN BI12SIO20 AND BI12GEO20 CRYSTALS [J].
HUIGNARD, JP ;
MICHERON, F .
APPLIED PHYSICS LETTERS, 1976, 29 (09) :591-593
[8]  
HUIGNARD JP, 1976, OPTICAL PROPERTIES S
[9]  
HUIGNARD JP, 1976, REV TECH, V4, P671
[10]  
KIM DM, 1975, APPL PHYS LETT, V28, P8338