A 10 MHZ MICROPOWER CMOS FRONT END FOR DIRECT READOUT OF PIXEL DETECTORS

In the framework of the CERN-LAA project for detector R and D, a micropower circuit of 200 μm×200μm with a current amplifier, a latched comparator and a digital memory element has been tested electrically and operated in connection with linear silicon detector arrays. The experimental direct-readout (DRO) chip comprises a matrix of 9×12 circuit cells and has been manufactured in a 3 μm CMOS technology. Particles and X-ray photons below 22 keV were detected, and thresholds can be set between 2000 and 20 000 e-. The noise is less than 4 keV FWHM or 500 e- rms and the power dissipation per pixel element is 30 μW. The chip can be coupled to a detector matrix using bump bonding. © 1990.