OPTICAL INVESTIGATION OF QUATERNARY GAINASSB/ALGAASSB STRAINED MULTIPLE-QUANTUM WELLS

被引：11

作者：

SHEN, WZ

SHEN, SC

TANG, WG

ZHAO, Y

LI, AZ

机构：

[1] CCAST,WORLD LAB,BEIJING 100080,PEOPLES R CHINA

[2] CTR ADV SCI & TECHNOL MICROSTRUCT,NANJING 210008,PEOPLES R CHINA

[3] SHANGHAI INST MET,DEPT FUNCT MAT INFORMAT,SHANGHAI 200050,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 23期

关键词：

D O I：

10.1063/1.115270

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence and absorption measurements were carried out on quaternary Ga0.75In0.25As0.04Sb0.96/Al0.22Ga0.78As0.02Sb0.98 Strained multiple quantum well (MQW) structure grown by molecular-beam epitaxy to investigate its band offsets and subband behavior. Strong luminescence and well-resolved excitonic absorption peaks are observed even at room temperature, which is indicative of good quality of our quaternary sample. By fitting the experimental results with the theoretical calculations, we find that the light holes are in Ga0.75In0.25As0.04Sb0.98 well regions (type I MQW) and the conduction-band offset ratio Q(c)=0.66+/-0.01. The transition from type I to type II for light holes may occur for the composition of x less than or equal to 0.70 in GaxIn1-xAs0.04Sb0.96/Al0.22Ga0.78As0.02Sb0.98 system. (C) 1995 American Institute of Physics.

引用

页码：3432 / 3434

页数：3

共 12 条

[1] BAND-GAPS AND REFRACTIVE-INDEXES OF ALGAASSB, GAINASSB, AND INPASSB - KEY PROPERTIES FOR A VARIETY OF THE 2-4-MU-M OPTOELECTRONIC DEVICE APPLICATIONS [J].