DISLOCATIONS IN SILICON OBSERVED BY HIGH-VOLTAGE, HIGH-RESOLUTION ELECTRON-MICROSCOPY

被引：8

作者：

HIRAGA, K ^{[1
]}

HIRABAYASHI, M ^{[1
]}

SATO, M ^{[1
]}

SUMINO, K ^{[1
]}

机构：

[1] TOHOKU UNIV,IRON STEEL & OTHER MET RES INST,SENDAI,MIYAGI 980,JAPAN

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1982年 / 17卷 / 02期

关键词：

D O I：

10.1002/crat.2170170210

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：189 / 195

页数：7

共 13 条

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[2]

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[3]

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[5]

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[6]

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[7]

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[8] STACKING-FAULT TETRAHEDRA IN DEFORMED FACE-CENTRED CUBIC METALS [J].

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SEGALL, RL .

PHILOSOPHICAL MAGAZINE, 1965, 11 (111) :459-&

[9] HVEM STRUCTURE IMAGES OF EXTENDED 60-DEGREES-DISLOCATION AND SCREW-DISLOCATION IN SILICON [J].

SATO, M ;

HIRAGA, K ;

SUMINO, K .

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[10]

SATO M, 1979, PHYS STAT SOL A, V55, P279

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