INFLUENCE OF THE COMPOSITION MODULATION ON THE RELAXATION OF IN0.54GA0.46AS STRAINED LAYERS

被引：15

作者：

PEIRO, F ^{[1
]}

CORNET, A ^{[1
]}

MORANTE, JR ^{[1
]}

CLARK, S ^{[1
]}

WILLIAMS, RH ^{[1
]}

机构：

[1] UNIV WALES COLL MED, DEPT PHYS, CARDIFF CF4 4XN, S GLAM, WALES

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 16期

关键词：

D O I：

10.1063/1.106148

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

TEM observation of In0.54Ga0.46As grown by MBE on InP shows a coarse tweed quasiperiodic structure related with a composition modulation. The period-LAMBDA of this modulation has been found to be dependent on the layer thickness. The elastic energy associated with the modulation induced strain, has been taken into account to explain this period dependence. The evolution of strain parallel to growth surface with epilayer thickness has been correlated with both the change on the modulation period and the presence of defects.

引用

页码：1957 / 1959

页数：3

共 12 条

[1] MISFIT STRESS IN INGAAS/INP HETEROEPITAXIAL STRUCTURES GROWN BY VAPOR-PHASE EPITAXY [J].

CHU, SNG ;

MACRANDER, AT ;

STREGE, KE ;

JOHNSTON, WD .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :249-257

[2]

DECREMOUX B, 1981, I PHYS C SER, V56, P115

[3]

GLAS F, 1989, NATO ADV SCI I B-PHY, V203, P217

[4] ELASTIC STATE AND THERMODYNAMICAL PROPERTIES OF INHOMOGENEOUS EPITAXIAL LAYERS - APPLICATION TO IMMISCIBLE III-V-ALLOYS [J].

GLAS, F .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) :3201-3208

[5] COMPOSITION MODULATION IN LIQUID-PHASE EPITAXIAL INXGA1-XASYP1-Y LAYERS LATTICE MATCHED TO INP SUBSTRATES [J].

HENOC, P ;

IZRAEL, A ;

QUILLEC, M ;

LAUNOIS, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :963-965

[6] SPINODAL DECOMPOSITION IN INGAASP EPITAXIAL LAYERS [J].

MAHAJAN, S ;

DUTT, BV ;

TEMKIN, H ;

CAVA, RJ ;

BONNER, WA .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (02) :589-595

[7]

MAHAJAN S, 1989, I PHYS C SER, V100, P143

[8] TRANSMISSION ELECTRON-MICROSCOPE AND TRANSMISSION ELECTRON-DIFFRACTION OBSERVATIONS OF ALLOY CLUSTERING IN LIQUID-PHASE EPITAXIAL (001) GAINASP LAYERS [J].

NORMAN, AG ;

BOOKER, GR .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) :4715-4720

[9]

SHADID MA, 1987, PHYS REV LETT, V58, P2567

[10] MISCIBILITY GAPS IN QUATERNARY-III-V ALLOYS [J].

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1982, 58 (01) :194-202

← 1 2 →