RESONANT RAMAN-SCATTERING NEAR THE DONOR-ACCEPTOR TRANSITION IN GAAS

被引：6

作者：

HENNING, JCM ^{[1
]}

KESSENER, YARR ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 11期

关键词：

D O I：

10.1088/0268-1242/7/11/018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Resonant enhancement Of Lo and TO phonon Raman scattering is observed in GaAs when the energy of the exciting light Homega(p)BAR coincides with a donor-to-acceptor transition. Strong additional Raman satellites arise on the high-energy side of the resonance curve (1.495 < Homega(p)BAR, < 1.510 eV). These satellites are ascribed to localized phonons associated with specific donor-acceptor pairs. This interpretation is substantiated by the observation that their Raman shifts increase with decreasing donor-acceptor separation R, according to DELTAE is-proportional-to exp(-2R/a(D)).

引用

页码：1390 / 1393

页数：4

共 11 条

[1] CARDONA M, 1982, TOP APPL PHYS, V50, P19
[2] OBSERVATION OF OPTICAL PHONONS BOUND TO NEUTRAL DONORS
DEAN, PJ
MANCHON, DD
HOPFIELD, JJ
[J]. PHYSICAL REVIEW LETTERS, 1970, 25 (15) : 1027 - &
[3] RESONANT INTERACTIONS BETWEEN LOCALIZED LO PHONONS AND CONTINUUM STATES OF DONORS IN CDS AND CDSE
HENRY, CH
HOPFIELD, JJ
[J]. PHYSICAL REVIEW B, 1972, 6 (06): : 2233 - &
[4] Martin R.M., 1975, TOP APPL PHYS, V8, P79, DOI DOI 10.1007/978-3-540-37568-5_3
[5] NAKASHIMA S, 1980, J PHYS SOC JPN, V49, pA193
[6] RESONANCE RAMAN-SCATTERING OF SI LOCAL VIBRATIONAL-MODES IN GAAS
RAMSTEINER, M
WAGNER, J
ENNEN, H
MAIER, M
[J]. PHYSICAL REVIEW B, 1988, 38 (15): : 10669 - 10676
[7] SPRINGETT R, 1990, SEMICOND SCI TECH, V5, P1141, DOI 10.1088/0268-1242/5/11/013
[8] SZYMANSKI HA, 1967, RAMAN SPECTROSCOPY, pCH1
[9] EXCITON-PHONON BOUND STATE - A NEW QUASIPARTICLE
TOYOZAWA, Y
HERMANSON, J
[J]. PHYSICAL REVIEW LETTERS, 1968, 21 (24) : 1637 - +
[10] RESONANT RAMAN-SCATTERING IN GAAS
TROMMER, R
CARDONA, M
[J]. PHYSICAL REVIEW B, 1978, 17 (04): : 1865 - 1876

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