GAXIN1-XAS QUANTUM-WIRE HETEROSTRUCTURES FORMED BY STRAIN-INDUCED LATERAL-LAYER ORDERING

被引：50

作者：

CHOU, ST ^{[1
]}

CHENG, KY ^{[1
]}

CHOU, LJ ^{[1
]}

HSIEH, KC ^{[1
]}

机构：

[1] UNIV ILLINOIS,MICROELECTR LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 10期

关键词：

D O I：

10.1063/1.360507

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaxIn1-xAs quantum wire (QWR) arrays were grown on (100) on-axis InP substrates by single-step molecular-beam epitaxy. The QWRs were formed in situ in (GaAs)(2)/(InAs)(2.2) short-period-superlattice (SPS) layers by the strain-induced lateral-layer ordering (SILO) process. An analysis of the cross-sectional and plan-view transmission electron microscopy images, photoluminescence peak energies, and polarization anisotropy has confirmed the QWR nature of these heterostructures. The SILO process occurs over a wide growth temperature range near 500 degrees C. However, both high and low growth temperatures result in a weaker lateral composition modulation. The strength of the lateral composition modulation is proportional to the total thickness of the SPS quantum-well layers, regardless of-the thickness of the individual quantum well. In other words, the magnitude of composition modulation accumulates when growth proceeds. A strain-driven bulk solid-state diffusion model has been proven to be part of the driving force of the SILO process, in addition to a dynamic surface diffusion during growth. (C) 1995 American Institute of Physics.

引用

页码：6270 / 6275

页数：6