LOCALIZED ELECTRON-STATES IN A RANDOM STACKING OF SILICON BILAYERS

被引：5

作者：

CHING, WY ^{[1
]}

HUANG, MZ ^{[1
]}

HUBER, DL ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.29.2337

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2337 / 2340

页数：4

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