INTENSITY DEPENDENCE OF THE MINORITY-CARRIER DIFFUSION LENGTH IN AMORPHOUS-SILICON BASED ALLOYS

被引：24

作者：

HACK, M

SHUR, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 08期

关键词：

D O I：

10.1063/1.333340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2967 / 2971

页数：5

共 20 条

[1] DIRECT MEASUREMENT OF THE BULK-DENSITY OF GAP STATES IN N-TYPE HYDROGENATED AMORPHOUS-SILICON [J].

COHEN, JD ;

LANG, DV ;

HARBISON, JP .

PHYSICAL REVIEW LETTERS, 1980, 45 (03) :197-200

[2] DIFFUSION LENGTH OF HOLES IN A-SI-H BY THE SURFACE PHOTO-VOLTAGE METHOD [J].

DRESNER, J ;

SZOSTAK, DJ ;

GOLDSTEIN, B .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :998-999

[3] SECONDARY GRAIN-BOUNDARY DISLOCATIONS IN [001] TWIST BOUNDARIES IN MGO .2. EXTRINSIC STRUCTURES [J].

SUN, CP ;

BALLUFFI, RW .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (01) :63-73

[4] METHOD FOR MEASUREMENT OF SHORT MINORITY CARRIER DIFFUSION LENGTHS IN SEMICONDUCTORS [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (12) :2550-&

[5] COMPUTER-SIMULATION OF AMORPHOUS-SILICON BASED ALLOY P-I-N SOLAR-CELLS [J].

HACK, M ;

SHUR, M .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (05) :140-143

[6] THEORETICAL MODELING OF AMORPHOUS SILICON-BASED ALLOY P-I-N SOLAR-CELLS [J].

HACK, M ;

SHUR, M .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :5858-5863

[7] MINORITY-CARRIER DIFFUSION LENGTHS IN AMORPHOUS SILICON-BASED ALLOYS [J].

HACK, M ;

MCGILL, J ;

CZUBATYJ, W ;

SINGH, R ;

SHUR, M ;

MADAN, A .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6270-6275

[8]

HACK M, J APPL PHYS

[9] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE [J].

MADAN, A ;

LECOMBER, PG ;

SPEAR, WE .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) :239-257

[10] THEORY AND EXPERIMENT ON THE SURFACE-PHOTOVOLTAGE DIFFUSION-LENGTH MEASUREMENT AS APPLIED TO AMORPHOUS-SILICON [J].

MOORE, AR .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :222-228

← 1 2 →