VARIATION OF CARRIER CONCENTRATION IN PB0.8SN0.2TE WITH ANNEALING AND GROWTH TEMPERATURE

被引:8
作者
PICKERING, C [1 ]
HARDING, WR [1 ]
GEEVES, NG [1 ]
YOUNG, ML [1 ]
机构
[1] ROYAL SIGNALS & RADAR ESTABL,BALDOCK,HERTFORDSHIRE,ENGLAND
关键词
D O I
10.1088/0022-3727/10/6/001
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L73 / L77
页数:5
相关论文
共 8 条
[1]   OPEN TUBE VAPOR TRANSPORT GROWTH OF PB-1-XSN-XTE EPITAXIAL-FILMS FOR INFRARED DETECTORS [J].
BELLAVANCE, DW ;
JOHNSON, MR .
JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (03) :363-380
[2]  
CALAWA AR, 1968, T METALL SOC AIME, V242, P374
[4]  
GOLDSTEIN L, 1969, CR ACAD SCI B PHYS, V268, P686
[5]  
Harman T. C., 1973, J NONMETALS, V1, P183
[6]  
HARMAN TC, 1974, APPL SOLID STATE SCI, V0004, P00001
[7]  
MELNGAILIS I, 1971, J PHYS CHEM SOLIDS S, V32, P407
[8]  
Melngailis I., 1970, SEMICOND SEMIMETALS, V5, P111, DOI [10.1016/S0080-8784(08)62815-X, DOI 10.1016/S0080-8784(08)62815-X]