INTERNAL QUANTUM EFFICIENCY OF LASER-DIODES

被引：12

作者：

CLAISSE, PR

TAYLOR, GW

机构：

[1] AT&T Bell Laboratories, Holmdel, New Jersey

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 21期

关键词：

LASERS; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19921276

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The internal quantum efficiency of laser diodes is determined from a consideration of current flow at threshold, and the corresponding quasi-Fermi level separation is used to evaluate the magnitude of all current components. The internal quantum efficiency is shown to be a strong function of temperature and cavity length. The results for single, multiple and strained quantum well structures are compared.

引用

页码：1991 / 1992

页数：2

共 5 条

[1]

AGRWAL GP, 1986, LONG WAVELENGTH SEMI

[2] 2ND QUANTIZED STATE OSCILLATION AND WAVELENGTH SWITCHING IN STRAINED-LAYER MULTIQUANTUM-WELL LASERS [J].