PHOTOVOLTAIC CHARACTERISTICS OF P-N GE-SI AND GE-GAAS HETEROJUNCTIONS

被引:40
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DONNELLY, JP
MILNES, AG
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10.1080/00207216608937869
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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共 18 条
[1]  
AGUSTA B, 1964, T IEEE ELECTRON DEVI, VED11, P533
[2]   ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].
BURSTEIN, E .
PHYSICAL REVIEW, 1954, 93 (03) :632-633
[3]  
DITRICK NH, 1961, RCA ENG, V7, P19
[4]  
DONNELLY JF, IN PRESS
[5]   EPITAXIAL GROWTH OF GE ON SI BY SOLUTION GROWTH TECHNIQUES [J].
DONNELLY, JP ;
MILNES, AG .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) :297-&
[6]   PHOTOVOLTAIC RESPONSE OF NGE-NSI HETERODIODES [J].
DONNELLY, JP ;
MILNES, AG .
SOLID-STATE ELECTRONICS, 1966, 9 (02) :174-&
[7]  
DONNELLY JP, 1965, THESIS CARNEGIE I TE
[8]  
MOSS TS, 1959, OPTICAL PROPERTIES S, P134
[9]  
MOSS TS, 1959, OPTICAL PROPERTIES S, P116
[10]  
NELSON H, 1963, RCA REV, V24, P603