CONDUCTIVITY AND MOBILITY IN N-INP AT VERY LOW-TEMPERATURES - NEW ARGUMENTS FOR A SHARP M-I TRANSITION

被引：3

作者：

DUBOIS, H ^{[1
]}

BISKUPSKI, G ^{[1
]}

SPRIET, JP ^{[1
]}

BRIGGS, A ^{[1
]}

机构：

[1] CNRS,CTR RECH TRES BASSES TEMP,F-38042 GRENOBLE,FRANCE

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1985年 / 18卷 / 09期

关键词：

D O I：

10.1088/0022-3719/18/9/004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L195 / L200

页数：6

共 11 条

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[2]

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[6]

MANSFIELD R, 1984, SOLID STATE ELECTRON

[7]

Mott N. F., 1974, METAL INSULATOR TRAN

[8] THE CONDUCTIVITY NEAR A MOBILITY EDGE [J].

MOTT, NF .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (06) :L75-L82

[9] METAL-INSULATOR-TRANSITION IN A DOPED SEMICONDUCTOR [J].

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LIN, W .

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[10]

SHKLOVSKII BI, 1982, JETP LETT+, V36, P51

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