JOSEPHSON FLUXONIC DIODE

被引：36

作者：

RAISSI, F

NORDMAN, JE

机构：

[1] Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 14期

关键词：

D O I：

10.1063/1.112859

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A nonuniform magnetic field has been applied to a long Josephson junction to create two separated vortex and antivortex regions. Such a configuration is the Josephson version of the so-called fluxonic diode, an electrical dual to the semiconductor p-n junction diode. Volt-ampere relations of a junction subjected to this magnetic field are compared with those obtained using a unidirectional magnetic field. The study, supported by simulation, shows a number of unique characteristics including rectification and fluxon injection across the junction. Both are necessary phenomena for realization of a bipolar transistor dual. (C) 1994 American Institute of Physics.

引用

页码：1838 / 1840

页数：3

共 6 条

[1]

DAVIDSON A, 1979, IEEE J SOLID STATE C, V14, P458

[2] DUALITY AND FLUXONICS IN SUPERCONDUCTING DEVICES [J].