DEFECT STRUCTURES IN A LAYER-BY-LAYER PHOTONIC BAND-GAP CRYSTAL

被引：108

作者：

OZBAY, E

TUTTLE, G

SIGALAS, M

SOUKOULIS, CM

HO, KM

机构：

[1] IOWA STATE UNIV SCI & TECHNOL,MICROELECTR RES CTR,AMES,IA 50011

[2] IOWA STATE UNIV SCI & TECHNOL,AMES LAB,AMES,IA 50011

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.51.13961

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have experimentally and theoretically investigated defect structures that are incorporated into a three-dimensional layer-by-layer photonic band-gap crystal. The defects are formed by either adding or removing dielectric material to or from the crystal. For both cases, we observed localized modes with frequencies that lie within the forbidden band gap of the pure crystal. Relatively high peak transmission (10 dB below the incident signal), and high quality factors (2000) have been measured. These measurements were in good agreement with theoretical simulations. Theoretical calculations also predict very high (Q>106) quality factors for certain cavity structures. © 1995 The American Physical Society.

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页码：13961 / 13965

页数：5

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