THE EFFECT OF ORIENTATION ON THE ELECTRICAL PROPERTIES OF EPITAXIAL GALLIUM ARSENIDE

被引：31

作者：

WILLIAMS, FV

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1964年 / 111卷 / 07期

关键词：

D O I：

10.1149/1.2426279

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：886 / 888

页数：3

共 12 条

[1] ANISOTROPIC SEGREGATION IN INSB [J].

ALLRED, WP ;

BATE, RT .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (03) :258-261

[2]

BANUS MD, 1962, J ELECTROCHEM SOC, V109, P829

[3] THE DISTRIBUTION OF SOLUTE IN CRYSTALS GROWN FROM THE MELT .1. THEORETICAL [J].

BURTON, JA ;

PRIM, RC ;

SLICHTER, WP .

JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) :1987-1991

[4] CROSS-SECTIONAL RESISTIVITY VARIATIONS IN GERMANIUM SINGLE CRYSTALS [J].

DIKHOFF, JAM .

SOLID-STATE ELECTRONICS, 1960, 1 (03) :202-&

[5] DISTRIBUTION COEFFICIENTS OF IMPURITIES IN GALLIUM ANTIMONIDE [J].

HALL, RN ;

RACETTE, JH .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (05) :856-&

[6] SEGREGATION OF IMPURITIES DURING THE GROWTH OF GERMANIUM AND SILICON CRYSTALS [J].

HALL, RN .

JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) :836-839

[7] CONSTITUTIONAL SUPERCOOLING AND FACET FORMATION OF GAAS [J].

LEMAY, CZ .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :439-&

[8] ORIENTATION-DEPENDENT DISTRIBUTION COEFFICIENTS IN MELT-GROWN INSB CRYSTALS [J].

MULLIN, JB ;

HULME, KF .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 17 (1-2) :1-&

[9]

MULLIN JB, 1962, COMPOUND SEMICONDUCT, V1, P378

[10] VAPOR GROWTH OF GALLIUM ARSENIDE [J].

NEWMAN, RL ;

GOLDSMITH, N .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (12) :1127-1130

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