THE BEHAVIOR OF DOPED HG1-XCDXTE EPITAXIAL LAYERS GROWN FROM HG-RICH MELTS

被引：48

作者：

KALISHER, MH

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(84)90288-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：365 / 372

页数：8

共 7 条

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[4] EXPERIMENTAL-DETERMINATION OF THE MERCURY-RICH CORNER OF THE HG-CD-TE PHASE-DIAGRAM
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) : 1 - 14
[5] JONES CE, 1985, 1984 P US WORKSH PHY
[6] KALISHER MH, 1982, JUL P IRIS SPEC GROU
[7] KALISHER MH, 1983, 7TH AACG W C CRYST G