OPTICAL INVESTIGATION ON THE GROWTH-PROCESS OF GAAS DURING MIGRATION-ENHANCED EPITAXY

被引：135

作者：

KOBAYASHI, N

HORIKOSHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 11期

关键词：

D O I：

10.1143/JJAP.28.L1880

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：L1880 / L1882

页数：3

相关论文

共 4 条

[1] OPTICAL-REFLECTANCE AND ELECTRON-DIFFRACTION STUDIES OF MOLECULAR-BEAM-EPITAXY GROWTH TRANSIENTS ON GAAS(001)
ASPNES, DE
HARBISON, JP
STUDNA, AA
FLOREZ, LT
[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (15) : 1687 - 1690
[2] REFLECTANCE DIFFERENCE STUDIES OF ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION GROWTH TRANSIENTS ON (100) GAAS
COLAS, E
ASPNES, DE
BHAT, R
KERAMIDAS, VG
KOZA, MA
STUDNA, AA
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 931 - 931
[3] HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1
[4] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY
HORIKOSHI, Y
KAWASHIMA, M
YAMAGUCHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10): : L868 - L870