THE DOPING CONCENTRATION-DEPENDENCE OF THE ZINC ACCEPTOR IONIZATION-ENERGY IN IN0.49GA0.51P

被引：12

作者：

CHANG, CY

WU, MC

SU, YK

NEE, CY

CHENG, KY

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 10期

关键词：

D O I：

10.1063/1.335610

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3907 / 3908

页数：2

共 9 条

[1] GAXIN1-XP LIQUID-PHASE EPITAXIAL-GROWTH ON (001), (111)A, AND (111)B GAAS SUBSTRATES [J].

ASAI, H ;

OE, K .

JOURNAL OF CRYSTAL GROWTH, 1983, 62 (01) :67-74

[2] APPLICATION OF QUANTUM DEFECT TECHNIQUES TO PHOTOIONIZATION OF IMPURITIES IN SEMICONDUCTORS [J].

BEBB, HB ;

CHAPMAN, RA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (10) :2087-&

[3]

COLEMAN JJ, 1975, IEEE J QUANTUM ELECT, VQE11, P471, DOI 10.1109/JQE.1975.1068650

[4] THE ENERGY-LEVELS OF ZN AND SE IN (ALXGA1-X)0.52IN0.48P [J].

HONDA, M ;

IKEDA, M ;

MORI, Y ;

KANEKO, K ;

WATANABE, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (03) :L187-L189

[5]

MILNES AG, 1973, DEEP IMPURITIES SEMI, P4

[6] KINETICS OF IMPURITY PHOTOCONDUCTIVITY [J].

RYVKIN, SM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 22 :5-17

[7] IMPORTANCE OF LATTICE MISMATCH IN GROWTH OF GAXIN1-XP EPITAXIAL CRYSTALS [J].

STRINGFELLOW, GB .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3455-+

[8]

Wu M.C., UNPUB

[9] LIQUID-PHASE-EPITAXIAL GROWTH OF INO.49GA0.51 P ON (100) GAAS BY A SUPERCOOLING METHOD [J].

WU, MC ;

SU, YK ;

CHENG, KY ;

CHANG, CY .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) :1537-1541

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