EXCESS AND THERMAL CURRENTS IN GALLIUM ARSENIDE ESAKI DIODES

被引：12

作者：

SHIBATA, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1964年 / 3卷 / 11期

关键词：

D O I：

10.1143/JJAP.3.711

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：711 / &

共 24 条

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[19] ELECTRONIC PROCESSES AND EXCESS CURRENTS IN GOLD-DOPED NARROW LILICON JUNCTIONS [J].

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[20]

SHIBATA A, TO BE PUBLISHED

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