MODIFICATION OF THRESHOLD CURRENT + NEAR-FIELD EMISSION PATTERN OF GAAS LASER BY ADSORBED DIELECTRIC LAYER

被引：16

作者：

WALKER, EJ

MICHEL, AE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1964年 / 35卷 / 08期

关键词：

D O I：

10.1063/1.1702850

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2285 / &

共 12 条

[1]

BROOM RF, 1963, NATURE, V198, P4878

[2]

BURNS G, TO BE PUBLISHED

[3] QUANTUM EFFICIENCY OF GAAS INJECTION LASERS [J].

CHEROFF, G ;

STERN, F ;

TRIEBWASSER, S .

APPLIED PHYSICS LETTERS, 1963, 2 (09) :173-174

[4]

DILL FH, 1963, FEB DIG TECH PAP INT

[5] SPATIAL DISTRIBUTION OF RADIATION FROM GAAS LASERS [J].

FENNER, GE ;

KINGSLEY, JD .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) :3204-&

[6] COHERENT LIGHT EMISSION FROM GAAS JUNCTIONS [J].

HALL, RN ;

CARLSON, RO ;

SOLTYS, TJ ;

FENNER, GE ;

KINGSLEY, JD .

PHYSICAL REVIEW LETTERS, 1962, 9 (09) :366-&

[7]

HEAVENS OS, 1958, OPTICAL PROPERTIES T, P58

[8]

LASHER G, 1964, PHYS REV, V133, pA533

[9] REFRACTIVE INDEX OF GAAS [J].

MARPLE, DTF .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) :1241-&

[10] STIMULATED EMISSION OF RADIATION FROM GAAS P-N JUNCTIONS [J].

NATHAN, MI ;

DUMKE, WP ;

BURNS, G ;

DILL, FH ;

LASHER, G .

APPLIED PHYSICS LETTERS, 1962, 1 (03) :62-64

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