ELECTRON-SCATTERING ANISOTROPY AND THE ELECTRICAL-RESISTIVITY OF DISLOCATIONS IN ALUMINUM AND ALUMINUM-ALLOYS

The experimental results of Endo et al (1985) on the temperature dependence of the electrical resistivity of dislocations in Al and Al alloys have been analyzed in terms of a three-group model incorporating anisotropy in the electron scattering. It is shown that, over the temperature range up to 40 K, the model gives excellent agreement not only in the form of the temperature dependence, but in magnitude also. Strong anisotropy exists in the electron scattering from dislocations, but the magnitude depends on the level of deformation involved. The anisotropy model is capable of explaining the experimental data on the Hall effect, the resistivity due to ordinary impurities and now those due to dislocations.