ADATOM PROCESSES NEAR STEP-EDGES AND EVOLUTION OF LONG-RANGE ORDER IN SEMICONDUCTOR ALLOYS GROWN FROM VAPOR-PHASE

被引：16

作者：

OGALE, SB ^{[1
]}

MADHUKAR, A ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90089

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 17期

关键词：

D O I：

10.1063/1.107100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single and multiple adatom energetics near the [110] and [110BAR] step edges on the As (2 X 4) reconstructed (missing dimer) GaAs (001) surface are examined to shed light on the issue of the occurrence of long range order in III-III-V alloys. Semiempirical potential functions and the simulated annealing procedure are employed. Step-induced local breaking of symmetry and the adatom-ledge interaction are found to favor the evolution of the <111> CuPt-B type of ordering.

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页码：2095 / 2097

页数：3

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