DEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS INVESTIGATED BY POSITRON-ANNIHILATION

被引：4

作者：

IKARI, A

KAWAKAMI, K

HAGA, H

UEDONO, A

WEI, L

KAWANO, T

TANIGAWA, S

机构：

[1] NIPPON STEEL CORP LTD,ELECTR RES LABS,HIKARI,YAMAGUCHI 743,JAPAN

[2] UNIV TSUKUBA,INST MAT SCI,TSUKUBA,IBARAKI 305,JAPAN

[3] UNIV TSUKUBA,CTR ISOTOPE,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 10期

关键词：

SILICON; OXYGEN; PRECIPITATES; STACKING FAULTS; POSITRON ANNIHILATION; VACANCY; INTERSTITIAL ATOM;

D O I：

10.1143/JJAP.33.5585

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Positron lifetime and Doppler broadening experiments were performed on Czochralski-grown silicon crystals. A monoenergetic positron beam was also used to measure the diffusion length of positrons in the wafer. From the measurements, it was observed that the value of diffusion length of positrons decreased at the region where microdefects were formed during the crystal growth process. It was also found that the line shape parameter S decreased and the lifetime of positrons increased at the region. These results can be attributed to the annihilation of positrons trapped by vacancy oxygen complexes which are formed in association with the microdefects.

引用

页码：5585 / 5589

页数：5

共 22 条

[21] RECOGNITION OF D-DEFECTS IN SILICON SINGLE-CRYSTALS BY PREFERENTIAL ETCHING AND EFFECT ON GATE OXIDE INTEGRITY [J].