PLASMONS IN THE MODULATED AND CONFINED 2DEG - A RAMAN-SCATTERING STUDY

被引：9

作者：

DAHL, C ^{[1
]}

JUSSERAND, B ^{[1
]}

IZRAEL, A ^{[1
]}

GERARD, JM ^{[1
]}

FERLAZZO, L ^{[1
]}

ETIENNE, B ^{[1
]}

机构：

[1] CNRS,MICROSTRUCT & MICROELECTR LAB,F-92225 BAGNEUX,FRANCE

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1994年 / 15卷 / 04期

关键词：

D O I：

10.1006/spmi.1994.1084

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Lateral wire arrays have been fabricated from a single modulation-doped GaAs quantum well employing reactive ion etching. Depending on the etch depth, the two-dimensional electron gas (2DEG) in the well acquires different degrees of modulation up to complete confinement. The different regimes are identified by their unique photoluminescence and Raman spectra. Deep-etched wires show plasmon resonances down to a width of 100nm.

引用

页码：441 / 445

页数：5

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