OPTICAL STUDIES OF VIBRONIC BANDS IN SILICON

被引：9

作者：

FOY, CP

机构：

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90259-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：276 / 280

页数：5

共 9 条

[1] ISOTOPE EFFECTS ON THE 969 MEV VIBRONIC BAND IN SILICON [J].

DAVIES, G ;

DOCARMO, MC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (23) :L687-L691

[2] UNIAXIAL-STRESS ANALYSIS OF THE 0.79 EV VIBRONIC BAND IN IRRADIATED SILICON [J].

FOY, CP .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (09) :2059-2067

[3] TEMPERATURE DEPENDENCE OF VIBRONIC SPECTRA IN IRRADIATED SILICON [J].

HARE, APG ;

DAVIES, G ;

COLLINS, AT .

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[4]

Jones C. E., 1971, Radiation Effects, V9, P83, DOI 10.1080/00337577108242037

[5] TEMPERATURE, STRESS, AND ANNEALING EFFECTS ON LUMINESCENCE FROM ELECTRON-IRRADIATED SILICON [J].

JONES, CE ;

JOHNSON, ES ;

COMPTON, WD ;

NOONAN, JR ;

STREETMA.BG .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) :5402-5410

[6]

KAPLYANSKII AA, 1964, OPT SPEKTROSK, V16, P329

[7] RECOMBINATION LUMINESCENCE IN IRRADIATED SILICON [J].

SPRY, RJ ;

COMPTON, WD .

PHYSICAL REVIEW, 1968, 175 (03) :1010-+

[8] NEW MODEL OF THE IRRADIATION-INDUCED 0.97-EV (G) LINE IN SILICON - A CS-SI-STAR COMPLEX [J].

THONKE, K ;

KLEMISCH, H ;

WEBER, J ;

SAUER, R .

PHYSICAL REVIEW B, 1981, 24 (10) :5874-5886

[9]

YUKHNEVICH AV, 1967, FIZ TVERD TELA+, V8, P2571

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