ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF GAAS/ZN(S,SE) MULTILAYERED STRUCTURES

被引:4
作者
FUJITA, S [1 ]
MURAWALA, PA [1 ]
MARUO, S [1 ]
TSUJI, O [1 ]
FUJITA, S [1 ]
机构
[1] SAMCO INT INC,DIV RES & DEV,FUSHIMI KU,KYOTO 612,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 1B期
关键词
GAAS/ZNSSE GROWTH; DISSIMILAR SEMICONDUCTOR MULTILAYERED STRUCTURE; OMVPE; THERMAL STABILITY;
D O I
10.1143/JJAP.30.L78
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report growth conditions of lattice-matched dissimilar semiconductor multilayered structures of GaAs/Zn(S, Se) systems by organometallic vapor-phase epitaxy (OMVPE). Since the optimum growth temperature for GaAs is much higher than that of Zn(S, Se), we performed low-temperature growth (470 degrees C) of GaAs by photo-assisted OMVPE. A smooth growth surface of GaAs on Zn(S, Se) was achieved by lattice-matching, sufficient preflow of triethylarsenic (TEAs) and a Zn-stabilized surface before starting the growth of GaAs; hence we succeeded in the fabrication of a ZnSSe/GaAs/ZnSSe double hetero (DH) structure and a superlattice. Thermal annealing of the DH structure showed no appreciable Zn diffusion into GaAs up to 650 degrees C but showed thermal stability at the interface up to 550-degrees-C.
引用
收藏
页码:L78 / L81
页数:4
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