INTERFACE BROADENING IN AS-GROWN MOVPE INP/GAINAS MQW STRUCTURES - DOMINANT INTERMIXING OF GROUP-V ELEMENTS DIRECTLY REVEALED BY AUGER ANALYSIS OF A CHEMICALLY BEVELED SECTION

被引：14

作者：

WITTGREFFE, JP

YATES, MJ

PERRIN, SD

SPURDENS, PC

机构：

[1] BT Laboratories, Ipswich, IP5 7RE, Martlesham Heath

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 130卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(93)90835-K

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The quality of a 100 period InP/GaInAs multiquantum well stack grown by metalorganic vapour phase epitaxy has been assessed by transmission electron microscopy on cleaved corners and Auger analysis of chemically bevelled sections. A trend from sharp to diffuse interfaces was found from the top to the base of the stack. Direct measurement of the variation of each matrix element by Auger electron imaging clearly showed that this interface broadening is dominated by intermixing of the group V elements. The effect is consistent with thermally induced diffusion and was found to be partially suppressed within a sulphur diffused region.

引用

页码：51 / 58

页数：8

共 12 条

[1] AN ACCURATE METHOD TO CHECK CHEMICAL INTERFACES OF EPITAXIAL III-V-COMPOUNDS [J].

BISARO, R ;

LAURENCIN, G ;

FRIEDERICH, A ;

RAZEGHI, M .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :978-980

[2] III-V-COMPOUND THIN-LAYER CHARACTERIZATION BY A CHEMICAL BEVEL ANGLE AUGER TECHNIQUE [J].

BRESSE, JF .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) :2026-2030

[3] MACROSCOPIC MECHANISM OF GROUP-V INTERDIFFUSION IN UNDOPED INGAAS/INP QUANTUM-WELLS GROWN BY MOVPE [J].

FUJII, T ;

SUGAWARA, M ;

YAMAZAKI, S ;

NAKAJIMA, K .

JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) :348-352

[4]

GLEW RW, 1992, FOURTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, P234, DOI 10.1109/ICIPRM.1992.235596

[5]

GLEW RW, 1991, INDIUM PHOSPHIDE AND RELATED MATERIALS : THIRD INTERNATIONAL CONFERENCE, VOLS 1 AND 2, P515, DOI 10.1109/ICIPRM.1991.147426

[6] COMPOSITION DEPENDENCE OF EQUAL THICKNESS FRINGES IN AN ELECTRON-MICROSCOPE IMAGE OF GAAS/ALXGA1-XAS MULTILAYER STRUCTURE [J].

KAKIBAYASHI, H ;

NAGATA, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (12) :L905-L907

[7] HIGHLY THERMALLY STABLE, HIGH-PERFORMANCE INGAASP - INGAASP MULTI-QUANTUM-WELL STRUCTURES FOR OPTICAL-DEVICES BY ATMOSPHERIC-PRESSURE MOVPE [J].

MIRCEA, A ;

OUGAZZADEN, A ;

PRIMOT, G ;

KAZMIERSKI, C .

JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :737-740

[8] INTERMIXING PROCESS OF INGAAS INP MQW GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY AT THERMAL ANNEALING [J].

NAKASHIMA, K ;

KAWAGUCHI, Y ;

KAWAMURA, Y ;

ASAHI, H ;

IMAMURA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (10) :L1620-L1622

[9] THE ROLE OF MOVPE IN THE MANUFACTURE OF HIGH-PERFORMANCE INP BASED OPTOELECTRONIC DEVICES [J].

NELSON, AW ;

SPURDENS, PC ;

COLE, S ;

WALLING, RH ;

MOSS, RH ;

WONG, S ;

HARDING, MJ ;

COOPER, DM ;

DEVLIN, WJ ;

ROBERTSON, MJ .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :792-802

[10] THE INFLUENCE OF GROWTH-CONDITIONS ON THE PLANARITY OF MOVPE GROWN GAINAS(P) INTERFACES [J].

SPURDENS, PC ;

TAYLOR, MR ;

HOCKLY, M ;

YATES, MJ .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :215-220

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