Defects at surfaces and interfaces

被引:164
作者
Pond, RC [1 ]
Hirth, JP [1 ]
机构
[1] WASHINGTON STATE UNIV, DEPT MECH & MAT ENGN, PULLMAN, WA 99164 USA
来源
SOLID STATE PHYSICS - ADVANCES IN RESEARCH AND APPLICATIONS, VOL 47 | 1994年 / 47卷
基金
美国国家科学基金会;
关键词
D O I
10.1016/S0081-1947(08)60641-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This chapter discusses the crystallographic features of dislocations, with emphasis on their topological characteristics as constrained by the symmetry of their hosts. Microscopic observations of metallic, ceramic, semiconducting, superconducting, and composite materials have confirmed that dislocations are ubiquitous features in interfaces, occurring both as isolated discrete defects and in organized arrays. The chapter presents several crystallographic tools and methodology. It reviews several important (infinite) crystal structures and their space groups and outlines the assignment of space groups to (1) crystals exhibiting a planar surface and (2) bicrystals. The chapter also discusses the topological properties of defects in single crystals together with surface discontinuities and isolated interfacial defects. Only line defects arise in the class of manifest symmetry, namely, dislocations, disclinations, and dispirations. A broad range of defect types can arise in the broken symmetry class, and it is convenient to subdivide these into surface-like features (steps, demisteps, and facet junctions), and bulk-like defects (dislocations, disclinations, and dispirations). Finally, the chapter discusses several interface structures modeled by dislocation arrays. © 1994 Academic Press, Inc.
引用
收藏
页码:287 / 365
页数:79
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