DEEP LEVEL DEFECTS IN HETERO-EPITAXIAL ZINC SELENIDE

被引：31

作者：

BESOMI, P

WESSELS, BW

机构：

[1] NORTHWESTERN UNIV,DEPT MAT SCI & ENGN,EVANSTON,IL 60201

[2] NORTHWESTERN UNIV,CTR MAT RES,EVANSTON,IL 60201

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 04期

关键词：

Compendex;

D O I：

10.1063/1.331054

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SEMICONDUCTING ZINC COMPOUNDS

引用

页码：3076 / 3084

页数：9

共 21 条

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