LATTICE PROPERTIES OF CHALCOPYRITE SEMICONDUCTORS UNDER HIGH-PRESSURE

被引：10

作者：

TAKARABE, K ^{[1
]}

KAWAI, K ^{[1
]}

WAKAMURA, K ^{[1
]}

MINOMURA, S ^{[1
]}

YAMAMOTO, N ^{[1
]}

机构：

[1] UNIV OSAKA PREFECTURE,COLL ENGN,SAKAI,OSAKA 591,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 99卷 / 1-4期

关键词：

D O I：

10.1016/S0022-0248(08)80023-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Correlation between tetragonal distortion (η) and anion displacement (u) is shown. Lattice constants of CuGaS2 were measured up to 4 GPa. It is found that the tetragonal distortion shows no change within experimental error in the pressure range investigated. Mixed crystals of CuGal-xAlxS2, CuGal-x,InxS2, and AgGa(SxSel-x)2 were prepared by a chemical transport method over the whole compositional range. Alloying and pressure effects on lattice properties are studied from the standpoint of clustering and mass disorder by Raman scattering experiments. We found that clustering and mass disorder effects are virtually suppressed in the CuGal-x,AlxS2 system; on the other hand, these effects are prominent in the AgGa(SxSel-x)2 system. © 1990, Elsevier Science Publishers B.V.. All rights reserved.

引用

页码：766 / 771

页数：6

共 17 条

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