NOBLE-GAS ATOMS AS CHEMICAL-IMPURITIES IN SILICON

被引:49
作者
TKACHEV, VD
MUDRYI, AV
MINAEV, NS
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 81卷 / 01期
关键词
D O I
10.1002/pssa.2210810135
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
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页码:313 / 321
页数:9
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