A PHOTOEMISSION INVESTIGATION OF THE SI-AU INTERFACE AND ITS BEHAVIOR UNDER OXYGEN EXPOSURE

被引：29

作者：

DERRIEN, J

RINGEISEN, F

机构：

来源：

关键词：

D O I：

10.1016/0039-6028(83)90789-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：L35 / L40

页数：6

共 15 条

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[7] FORMATION, STRUCTURE, AND ORIENTATION OF GOLD SILICIDE ON GOLD SURFACES
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[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1284 - 1291
[8] STUDIES OF THE EFFECT OF OXIDATION TIME AND TEMPERATURE ON THE SI-SIO2 INTERFACE USING AUGER SPUTTER PROFILING
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