ION KNOCK-ON BROADENING EFFECTS IN AUGER SPUTTER PROFILING STUDIES OF ULTRATHIN SIO2 LAYERS ON SI

被引：13

作者：

TAUBENBLATT, MA

HELMS, CR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 05期

关键词：

D O I：

10.1063/1.332341

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2667 / 2671

页数：5

共 13 条

[1] DEPTH RESOLUTION OF SPUTTER PROFILING [J].

ANDERSEN, HH .

APPLIED PHYSICS, 1979, 18 (02) :131-140

[2] SPUTTER-INDUCED ROUGHNESS IN THERMAL SIO2 DURING AUGER SPUTTER PROFILING STUDIES OF THE SI-SIO2 INTERFACE [J].

COOK, CF ;

HELMS, CR ;

FOX, DC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :44-46

[3]

FRENZEL H, 1980, JUN P INT TOP C RAL

[4] ION-BEAM-INDUCED ATOMIC MIXING [J].

HAFF, PK ;

SWITKOWSKI, ZE .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3383-3386

[5] STUDIES OF THE EFFECT OF OXIDATION TIME AND TEMPERATURE ON THE SI-SIO2 INTERFACE USING AUGER SPUTTER PROFILING [J].

HELMS, CR ;

JOHNSON, NM ;

SCHWARZ, SA ;

SPICER, WE .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :7007-7014

[6]

KINCHIN GH, 1955, REP PROGR PHYS, V18, P2

[7]

Lindhard J., 1963, MAT FYS MEDD DAN VID, V33, P1, DOI DOI 10.1002/ADMA.200904153

[8]

REIF F, 1965, STATISTICAL THERMODY, P488

[9] MODEL OF ION KNOCK-ON MIXING WITH APPLICATION TO SI-SIO2 INTERFACE STUDIES [J].

SCHWARZ, SA ;

HELMS, CR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :781-783

[10]

SIGMUND P, 1967, INT C APPLICATION IO, P214

← 1 2 →