ANNEALING OF HG1-XCDXTE - HG LOSS RATES AND ANNEALING OF ION-IMPLANTATION DAMAGE

被引：21

作者：

DIMIDUK, KC ^{[1
]}

OPYD, WG ^{[1
]}

GIBBONS, JF ^{[1
]}

SIGMON, TW ^{[1
]}

MAGEE, TJ ^{[1
]}

ORMOND, RD ^{[1
]}

机构：

[1] ARACOR,SUNNYVALE,CA 94086

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.572251

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1661 / 1665

页数：5

共 17 条

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[3] GROWTH OF HGCDTE FILMS BY LASER-INDUCED EVAPORATION AND DEPOSITION
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[6] CORRECTION
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[7] THERMAL PULSE ANNEALING OF BORON-IMPLANTED HGCDTE
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OPYD, WG
GREINER, ME
GIBBONS, JF
SIGMON, TW
BUBULAC, LO
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 750 - 752
[8] CONWAY KL, 1982, P IBMM II
[9] DIMIDUK KC, 1983, THESIS STANFORD U
[10] DIMIDUK KC, 1983, 1982 P MRS S A BOST