PUNCH-THROUGH TRANSIT-TIME OSCILLATOR

被引：14

作者：

WRIGHT, GT

机构：

来源：

ELECTRONICS LETTERS | 1968年 / 4卷 / 24期

关键词：

D O I：

10.1049/el:19680423

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：543 / &

相关论文

共 5 条

[1] CHARACTERISTICS OF THE DIELECTRIC DIODE AND TRIODE AT VERY HIGH FREQUENCIES [J].

BROJDO, S .

SOLID-STATE ELECTRONICS, 1963, 6 (06) :611-629

[2] SILICON PUNCH-THROUGH DIODE [J].

KUCHIS, EB ;

WRIGHT, GT .

ELECTRONICS LETTERS, 1968, 4 (02) :35-&

[3] CHARACTERISTICS OF THE SPACE-CHARGE-LIMITED DIELECTRIC DIODE AT VERY HIGH FREQUENCIES [J].

SHAO, J ;

WRIGHT, GT .

SOLID-STATE ELECTRONICS, 1961, 3 (3-4) :291-303

[4] EFFICIENCY OF TRANSISTOR TRANSIT-TIME OSCILLATOR [J].

WRIGHT, GT .

ELECTRONICS LETTERS, 1968, 4 (11) :217-&

[5] TRANSISTOR TRANSIT-TIME OSCILLATOR [J].

WRIGHT, GT .

ELECTRONICS LETTERS, 1967, 3 (06) :234-+