GROWTH OF IN-DOPED CDTE AND ITS APPLICATION FOR GAMMA-RAY DETECTOR

被引：4

作者：

MOCHIZUKI, K

YOSHIDA, T

IGAKI, K

SHOJI, T

HIRATATE, Y

机构：

[1] TOHOKU UNIV,SCH ENGN,DEPT MAT SCI,SENDAI,MIYAGI 980,JAPAN

[2] TOHOKU INST TECHNOL,DEPT ELECTR ENGN,SENDAI,JAPAN

来源：

关键词：

D O I：

10.1016/0167-577X(85)90059-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：219 / 221

页数：3

共 6 条

[1]

Bell R. O., 1970, Physica Status Solidi A, V1, P375, DOI 10.1002/pssa.19700010303

[2] DETERMINATION AND CHARACTERIZATION OF DEEP LEVELS IN P-CDTE(C1) [J].

HOSCHL, P ;

POLIVKA, P ;

PROSSER, V ;

VANECEK, M ;

SKRIVANKOVA, M .

REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :229-233

[3]

MARTIN GM, 1976, IEEE T NUCL SCI, V23, P154

NICHOLAS, KH ;

WOODS, J .

BRITISH JOURNAL OF APPLIED PHYSICS, 1964, 15 (07) :783-&

[5] CDTE GROWTH BY MULTIPASS THM AND SUBLIMATION THM [J].

TRIBOULET, R ;

MARFAING, Y .

[6]

ZANIO K, 1978, SEMICONDUCTORS SEMIM, V13