ADAPTIVE RESPONSE OF HUMAN-LYMPHOCYTES FOR THE REPAIR OF RADON-INDUCED CHROMOSOMAL DAMAGE

被引:61
作者
WOLFF, S
JOSTES, R
CROSS, FT
HUI, TE
AFZAL, V
WIENCKE, JK
机构
[1] PACIFIC NW RES LABS,RICHLAND,WA 99352
[2] UNIV CALIF SAN FRANCISCO,SCH MED,DEPT EPIDEMIOL & BIOSTAT,SAN FRANCISCO,CA 94143
来源
MUTATION RESEARCH | 1991年 / 250卷 / 1-2期
关键词
CHROMATID DELETIONS; CYTOGENETIC DAMAGE; RADON; ALPHA-PARTICLES; ADAPTIVE RESPONSE;
D O I
10.1016/0027-5107(91)90185-Q
中图分类号
Q3 [遗传学];
学科分类号
071007 ; 090102 ;
摘要
In human lymphocytes low doses of X-rays can decrease the number of chromatid deletions induced by subsequent high doses of sparsely ionizing X-rays. Because of the concern with the carcinogenic effects of low doses of alpha-particles from radon in homes, experiments were carried out to see if low doses of X-rays could also decrease the yield of chromosomal aberrations induced by subsequent exposure to radon. Human peripheral blood lymphocytes were irradiated with low doses of X-rays (2 cGy) at 48 h of culture, exposed to radon at 72 h of culture, and analyzed for the presence of chromatid aberrations at subsequent intervals. The frequency of chromatid aberrations induced by radon alone increased with time after exposure, indicating exaggerated differences in the stage sensitivity of cell cycle stages to high-LET radiation. Furthermore, the numbers of aberrations per cell did not follow a Poisson distribution but were over dispersed, as might be expected since high-LET radiations have a high relative biological effectiveness compared with low-LET radiations. Nevertheless, lymphocytes exposed to 2 cGy of X-rays before radon exposure contained approximately one-half the number of chromatid deletions compared with lymphocytes treated with radon alone and analzed at the same time. Thus, the putative chromosomal repair mechanism induced by low doses of sparsely ionizing radiation is also effective in reducing chromosomal aberrations induced by radon, which hitherto had been thought to be relatively independent of repair processes.
引用
收藏
页码:299 / 306
页数:8
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