ELECTRON-IRRADIATION INDUCED DEEP LEVELS IN P-INP

被引：57

作者：

SIBILLE, A ^{[1
]}

BOURGOIN, JC ^{[1
]}

机构：

[1] UNIV PARIS 07,ECOLE NORM SUPER,PHYS SOLIDES,CNRS LAB,F-75251 PARIS 05,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 10期

关键词：

D O I：

10.1063/1.93354

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：956 / 958

页数：3

共 16 条

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[9] IDENTIFICATION OF DEFECT STATE ASSOCIATED WITH A GALLIUM VACANCY IN GAAS AND ALXGA1-XAS [J].

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