THE ALPHA -] BETA POLYTYPIC TRANSFORMATION IN HIGH-TEMPERATURE INDENTED SIC

被引：34

作者：

YANG, JW

PIROUZ, P

机构：

[1] Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio

来源：

JOURNAL OF MATERIALS RESEARCH | 1993年 / 8卷 / 11期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1557/JMR.1993.2902

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-quality single crystals of 6H-SiC have been indented at 1170-degrees-C in vacuum. A TEM study of the indented regions shows that a 6H --> 3C polytypic transformation has occurred, further confirming that this phase transformation can be induced by an applied stress.

引用

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页码：2902 / 2907

页数：6

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