TEMPERATURE DEPENDENCE OF BAND GAP IN CDTE

被引:40
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MAHAN, GD
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10.1016/0022-3697(65)90029-6
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O6 [化学];
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0703 ;
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页码:751 / &
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共 23 条
[1]   CARRIER MOBILITY AND SHALLOW IMPURITY STATES IN ZNSE AND ZNTE [J].
AVEN, M ;
SEGALL, B .
PHYSICAL REVIEW, 1963, 130 (01) :81-+
[2]   DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].
BARDEEN, J ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1950, 80 (01) :72-80
[3]   ELECTROELASTIC PROPERTIES OF SULFIDES, SELENIDES, AND TELLURIDES OF ZINC AND CADMIUM [J].
BERLINCOURT, D ;
SHIOZAWA, LR ;
JAFFE, H .
PHYSICAL REVIEW, 1963, 129 (03) :1009-&
[4]   ELECTRON-PHONON SELF-ENERGIES IN MANY-VALLEY SEMICONDUCTORS [J].
COHEN, ML .
PHYSICAL REVIEW, 1962, 128 (01) :131-&
[5]   EFFECTIVE MASS APPROXIMATION FOR EXCITONS [J].
DRESSELHAUS, G .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) :14-22
[6]   SPIN-ORBIT COUPLING EFFECTS IN ZINC BLENDE STRUCTURES [J].
DRESSELHAUS, G .
PHYSICAL REVIEW, 1955, 100 (02) :580-586
[7]   SCATTERING OF HOLES BY PHONONS IN GERMANIUM [J].
EHRENREICH, H ;
OVERHAUSER, AW .
PHYSICAL REVIEW, 1956, 104 (02) :331-342
[8]   TEMPERATURE DEPENDENCE OF THE ENERGY GAP IN SEMICONDUCTORS [J].
FAN, HY .
PHYSICAL REVIEW, 1951, 82 (06) :900-905
[9]   ELECTRONS IN LATTICE FIELDS [J].
FROHLICH, H .
ADVANCES IN PHYSICS, 1954, 3 (11) :325-&
[10]  
GERSHENZON M, 1962, P INF C SEMICONDUCTO